《模拟电子技术（原书第11版）（英文版）》 - 台灣·大書城 - [美]Robert L. Boylestad[罗伯特·L. - 电子工业出版社

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『簡體書』模拟电子技术（原书第11版）（英文版）

書城自編碼： 3850601
分類：簡體書→大陸圖書→教材→研究生/本科/专科教材
作者： [美]Robert L. Boylestad[罗伯特·L.
國際書號(ISBN)： 9787121452246
出版社：电子工业出版社
出版日期： 2023-03-01

頁數/字數： /
釘裝：平塑

售價：NT$ 607

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內容簡介：

本书包括半导体器件基础、二极管及其应用电路、双极性结型晶体管和场效应晶体管放大电路的基本原理及频率响应、功率放大电路、多级放大电路、差分放大电路、电流源等模拟集成电路的单元电路、反馈电路、模拟集成运算放大器、电压比较器和波形变换电路等内容。本书结合国内高等教育中采用英语或双语教学的特点和实际情况，对原版教材进行了改编，精简了内容，突出了重点，补充了必要知识点，内容更加新颖和系统化，反映了半导体器件和应用的发展趋势，强调了系统工程的概念。

關於作者：

Robert L. Boylestad和Louis Nashelsky都是在大学从事电路分析、电子电路基础等相关学科教学的资深教授，在电子电路学科领域出版了多部优秀教材，受到很高的评价。Robert L. Boylestad和Louis Nashelsky都是在大学从事电路分析、电子电路基础等相关学科教学的资深教授，在电子电路学科领域出版了多部优秀教材，受到很高的评价。

Chapter 1?Semiconductor Diodes1.1?Introduction1.2?Semiconductor Materials: Ge， Si， and GaAs1.3?Covalent Bonding and Intrinsic Materials1.4?Extrinsic Materials: n-Type and p-Type Materials1.5?Semiconductor Diode1.6?Ideal versus Practical1.7?Resistance Levels1.8?Diode Equivalent Circuits1.9?Transition and Diffusion Capacitance1.10?Reverse Recovery Time1.11?Diode Specification Sheets1.12?Semiconductor Diode Notation1.13?Zener Diodes1.14?Light-Emitting Diodes1.15?Summary1.16?Computer AnalysisProblemsChapter 2?Diode Applications2.1?Introduction2.2?Load-Line Analysis2.3?Equivalent Model Analysis2.4?AND/OR Gates2.5?Sinusoidal Inputs， Half-Wave Rectification2.6?Full-Wave Rectification2.7?Clippers2.8?Clampers2.9?Zener Diodes2.10?SummaryProblemsChapter 3?Bipolar Junction Transistors3.1?Introduction3.2?Transistor Construction3.3?Transistor Operation3.4?Common-Base Configuration3.5?Transistor Amplifying Action3.6?Common-Emitter Configuration3.7?Common-Collector Configuration3.8?Limits of Operation3.9?Transistor Specification Sheet3.10?Transistor Casing and Terminal Identification3.11?SummaryProblemsChapter 4?DC Biasing —BJTs4.1?Introduction4.2?Operating Point4.3?Fixed-Bias Circuit4.4?Emitter Bias4.5?Voltage-Divider Bias4.6?DC Bias with Voltage Feedback4.7?Miscellaneous Bias Configurations4.8?Transistor Switching Networks4.9?pnp Transistors4.10?Bias Stabilization4.11?SummaryProblemsChapter 5?BJT AC Analysis5.1?Introduction5.2?Amplification in the AC Domain5.3?BJT Transistor Modeling5.4?The re Transistor Model5.5?The Hybrid Equivalent Model5.6?Hybrid π Model5.7?Variations of Transistor Parameters5.8?Common-Emitter Fixed-Bias Configuration5.9?Voltage-Divider Bias5.10?CE Emitter-Bias Configuration5.11?Emitter-Follower Configuration5.12?Common-Base Configuration5.13?Collector Feedback Configuration5.14?Collector DC Feedback Configuration5.15?Determining the Current Gain5.16?Effect of RL and Rs5.17?Two-Port Systems Approach5.18?Summary Table5.19?Cascaded Systems5.20?Darlington Connection5.21?Feedback Pair5.22?Current Mirror Circuits5.23?Current Source Circuits5.24?Approximate Hybrid Equivalent Circuit5.25?SummaryProblemsChapter 6?Field-Effect Transistors6.1?Introduction6.2?Construction and Characteristics of JFETs6.3?Transfer Characteristics6.4?Specification Sheets (JFETs)6.5?Important Relationships6.6?Depletion-Type MOSFETs6.7?Enhancement-Type MOSFETs6.8?CMOS6.9?Summary Table6.10?SummaryProblemsChapter 7?FET Biasing7.1?Introduction7.2?Fixed-Bias Configuration7.3?Self-Bias Configuration7.4?Voltage-Divider Biasing7.5?Depletion-Type MOSFETs7.6?Enhancement-Type MOSFETs7.7?Summary Table7.8?Combination Networks7.9?p-Channel FETs7.10?SummaryProblemsChapter 8?FET Amplifiers8.1?Introduction8.2?FET Small-Signal Model8.3?JFET Fixed-Bias Configuration8.4?JFET Self-Bias Configuration8.5?JFET Voltage-Divider Configuration8.6?JFET Source-Follower (Common-Drain) Configuration8.7?JFET Common-Gate Configuration8.8?Depletion-Type MOSFETs8.9?Enhancement-Type MOSFETs8.10?E-MOSFET Drain-Feedback Configuration8.11?E-MOSFET Voltage-Divider Configuration8.12?Summary Table8.13?Effect of RL and Rsig8.14?Cascade Configuration8.15?SummaryProblemsChapter 9?BJT and FET Frequency Response9.1?Introduction9.2?General Frequency Considerations9.3?Low-Frequency Analysis — Bode Plot9.4?Low-Frequency Response — BJT Amplifier9.5?Low-Frequency Response — FET Amplifier9.6?Miller Effect Capacitance9.7?High-Frequency Response — BJT Amplifier9.8?High-Frequency Response — FET Amplifier9.9?Multistage Frequency Effects9.10?SummaryProblemsChapter 10?Operational Amplifiers10.1?Introduction10.2?Differential Amplifier Circuit10.3?Differential and Common-Mode Operation10.4?BiFET， BiMOS， and CMOS Differential Amplifier Circuits10.5?Op-Amp Basics10.6?Op-Amp Specifications — DC Offset Parameters10.7?Op-Amp Specifications — Frequency Parameters10.8?Op-Amp Unit Specifications10.9?SummaryProblemsChapter 11?Op-Amp Applications11.1?Operation Circuits11.2?Active Filters11.3?Comparator Unit Operation11.4?Schmitt Trigger11.5?SummaryProblemsChaper 12?Power Amplifiers12.1?Introduction — Definitions and Amplifier Types12.2?Series-Fed Class A Amplifier12.3?Transformer-Coupled Class A Amplifier12.4?Class B Amplifier Operation12.5?Class B Amplifier Circuits12.6?Class C and Class D Amplifiers12.7?SummaryProblemsChapter 13?Feedback Circuits13.1?Feedback Concepts13.2?Feedback Connection Types13.3?Practical Feedback Circuits13.4?Feedback Amplifier — Phase and Frequency Considerations13.5?Summary

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