美国新墨西哥大学电气与计算机工程系教授，于新墨西哥大学获博士学位后，成为Hanscom空军基地固态科学实验室电子工程师。1976年加入新墨西哥大学电气与计算机工程系，从事半导体物理与器件课程和电路课程的教学工作。目前仍为该系的返聘教员。另著有Microelectronics Circuit Analysis and Design， Fourth Edition和Semiconductor Physics and Devices：Basic Principles， Fourth Edition两本教材。美国新墨西哥大学电气与计算机工程系教授，于新墨西哥大学获博士学位后，成为Hanscom空军基地固态科学实验室电子工程师。1976年加入新墨西哥大学电气与计算机工程系，从事半导体物理与器件课程和电路课程的教学工作。目前仍为该系的返聘教员。另著有Microelectronics Circuit Analysis and Design， Fourth Edition和Semiconductor Physics and Devices：Basic Principles， Fourth Edition两本教材。
目錄：
CHAPTER 1 The Crystal Structure of Solids 固体的晶体结构1.0 PREVIEW 概览1.1 SEMICONDUCTOR MATERIALS 半导体材料1.2 TYPES OF SOLIDS 固体类型1.3 SPACE LATTICES 空间点阵1.3.1 Primitive and Unit Cell 原胞与晶胞1.3.2 Basic Crystal Structures 基本晶体结构1.3.3 Crystal Planes and Miller Indices 晶面和米勒指数1.3.4 The Diamond Structure 金刚石结构1.4 ATOMIC BONDING 原子价键1.5 IMPERFECTIONS AND IMPURITIES IN SOLIDS 固体中的缺陷和杂质1.5.1 Imperfections in Solids 固体缺陷1.5.2 Impurities in Solids 固体中的杂质Σ1.6 GROWTH OF SEMICONDUCTOR MATERIALS 半导体材料生长1.6.1 Growth from a Melt 熔体生长1.6.2 Epitaxial Growth 外延生长Σ1.7 DEVICE FABRICATION TECHNIQUES: OXIDATION 器件制备技术：氧化1.8 SUMMARY 小结PROBLEMS 习题CHAPTER 2 Theory of Solids 固体理论2.0 PREVIEW 概览2.1 PRINCIPLES OF QUANTUM MECHANICS 量子力学的基本原理2.1.1 Energy Quanta 能量子2.1.2 Wave-Particle Duality Principle 波粒二象性2.2 ENERGY QUANTIZATION AND PROBABILITY CONCEPTS 能量量子化和概率2.2.1 Physical Meaning of the Wave Function 波函数的物理意义2.2.2 The One-Electron Atom 单电子原子2.2.3 Periodic Table 元素周期表2.3 ENERGY-BAND THEORY 能带理论2.3.1 Formation of Energy Bands 能带的形成2.3.2 The Energy Band and the Bond Model 能带与价键模型2.3.3 Charge Carriers—Electrons and Holes 载流子——电子和空穴2.3.4 Effective Mass 有效质量2.3.5 Metals， Insulators， and Semiconductors 金属、 绝缘体和半导体2.3.6 The k-Space Diagram k 空间能带图2.4 DENSITY OF STATES FUNCTION 态密度函数2.5 STATISTICAL MECHANICS 统计力学2.5.1 Statistical Laws 统计规律2.5.2 The Fermi-Dirac Distribution Function and the Fermi Energy 费米-狄拉克分布和费米能级2.5.3 Maxwell-Boltzmann Approximation 麦克斯韦-玻尔兹曼近似2.6 SUMMARY 小结PROBLEMS 习题CHAPTER 3 The Semiconductor in Equilibrium 平衡半导体3.0 PREVIEW 概览3.1 CHARGE CARRIERS IN SEMICONDUCTORS 半导体中的载流子3.1.1 Equilibrium Distribution of Electrons and Holes 电子和空穴的平衡分布3.1.2 The n0 and p0 Equations 平衡电子和空穴浓度方程3.1.3 The Intrinsic Carrier Concentration 本征载流子浓度3.1.4 The Intrinsic Fermi-Level Position 本征费米能级的位置3.2 DOPANT ATOMS AND ENERGY LEVELS 掺杂原子与能级3.2.1 Qualitative Description 定性描述3.2.2 Ionization Energy 电离能3.2.3 Group III-V Semiconductors III-V族半导体3.3 CARRIER DISTRIBUTIONS IN THE EXTRINSIC SEMICONDUCTOR 非本征半导体的载流子分布3.3.1 Equilibrium Distribution of Electrons and Holes 电子和空穴的平衡分布3.3.2 The n0 p0 Product n0 p0 积Σ3.3.3 The Fermi-Dirac Integral 费米-狄拉克积分3.3.4 Degenerate and Nondegenerate Semiconductors 简并与非简并半导体3.4 STATISTICS OF DONORS AND ACCEPTORS 施主和受主的统计分布3.4.1 Probability Function 概率分布函数Σ3.4.2 Complete Ionization and Freeze-Out 完全电离与冻析3.5 CARRIER CONCENTRATIONS—EFFECTS OF DOPING 载流子浓度——掺杂的影响3.5.1 Compensated Semiconductors 补偿半导体3.5.2 Equilibrium Electron and Hole Concentrations 平衡电子和空穴浓度3.6 POSITION OF FERMI ENERGY LEVEL—EFFECTS OF DOPING AND TEMPERATURE 费米能级的位置——掺杂和温度的影响3.6.1 Mathematical Derivation 数学推导3.6.2 Variation of EF with Doping Concentration and Temperature EF 随掺杂浓度和温度的变化3.6.3 Relevance of the Fermi Energy 费米能级的关联性Σ3.7 DEVICE FABRICATION TECHNOLOGY: DIFFUSION AND ION IMPLANTATION 器件制备技术：扩散和离子注入3.7.1 Impurity Atom Diffusion 杂质原子扩散3.7.2 Impurity Atom Ion Implantation 离子注入3.8 SUMMARY 小结PROBLEMS 习题CHAPTER 4 Carrier Transport and Excess Carrier Phenomena 载流子输运和过剩载流子现象4.0 PREVIEW 概览4.1 CARRIER DRIFT 载流子的漂移运动4.1.1 Drift Current Density 漂移电流密度4.1.2 Mobility Effects 迁移率4.1.3 Semiconductor Conductivity and Resistivity 半导体的电导率和电阻率4.1.4 Velocity Saturation 速度饱和4.2 CARRIER DIFFUSION 载流子的扩散运动4.2.1 Diffusion Current Density 扩散电流密度4.2.2 Total Current Density 总电流密度4.3 GRADED IMPURITY DISTRIBUTION 渐变杂质分布4.3.1 Induced Electric Field 感应电场4.3.2 The Einstein Relation 爱因斯坦关系4.4 CARRIER GENERATION AND RECOMBINATION 载流子的产生与复合4.4.1 The Semiconductor in Equilibrium 平衡半导体4.4.2 Excess Carrier Generation and Recombination 过剩载流子的产生与复合4.4.3 Generation-Recombination Processes 产生-复合过程Σ4.5 THE HALL EFFECT 霍尔效应4.6 SUMMARY 小结PROBLEMS 习题CHAPTER 5 The pn Junction and Metal-Semiconductor Contact pn结和金属-半导体接触5.0 PREVIEW 概览5.1 BASIC STRUCTURE OF THE PN JUNCTION PN结的基本结构5.2 THE PN JUNCTION—ZERO APPLIED BIAS 零偏PN结5.2.1 Built-In Potential Barrier 内建电势5.2.2 Electric Field 电场5.2.3 Space Charge Width 空间电荷区宽度5.3 THE PN JUNCTION—REVERSE APPLIED BIAS 反偏PN结5.3.1 Space Charge Width and Electric Field 空间电荷区宽度与电场5.3.2 Junction Capacitance 势垒电容5.3.3 One-Sided Junctions 单边突变结5.4 METAL-SEMICONDUCTOR CONTACT—RECTIFYING JUNCTION 金属-半导体接触——整流结5.4.1 The Schottky Barrier 肖特基势垒结5.4.2 The Schottky Junction—Reverse Bias 反偏肖特基结5.5 FORWARD APPLIED BIAS—AN INTRODUCTION 正偏结简介5.5.1 The pn Junction pn结5.5.2 The Schottky Barrier Junction 肖特基势垒结5.5.3 Comparison of the Schottky Diode and the pn Junction Diode 肖特基二极管和pn结二极管的比较Σ5.6 METAL-SEMICONDUCTOR OHMIC CONTACTS 金属-半导体的欧姆接触Σ5.7 NONUNIFORMLY DOPED PN JUNCTIONS 非均匀掺杂PN结5.7.1 Linearly Graded Junctions 线性缓变结5.7.2 Hyperabrupt Junctions 超突变结5.8 DEVICE FABRICATION TECHNIQUES: PHOTOLITHOGRAPHY， ETCHING， AND BONDING 器件制备技术：光刻、刻蚀和键合5.8.1 Photomasks and Photolithography 光学掩膜版和光刻5.8.2 Etching 刻蚀5.8.3 Impurity Diffusion or Ion Implantation 杂质扩散或离子注入5.8.4 Metallization， Bonding， and Packaging 金属化、键合和封装5.9 SUMMARY 小结PROBLEMS 习题CHAPTER 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor MOS场效应晶体管基础6.0 PREVIEW 概览6.1 THE MOSFIELD-EFFECT TRANSISTOR ACTION MOS场效应晶体管作用6.1.1 Basic Principle of Operation 基本工作原理6.1.2 Modes of Operation 工作模式6.1.3 Amplification with MOSFETs MOSFET放大6.2 THE TWO-TERMINAL MOSCAPACITOR 双端 MOS电容6.2.1 Energy-Band Diagrams and Charge Distributions 能带结构和电荷分布6.2.2 Depletion Layer Thickness 耗尽层厚度6.3 POTENTIAL DIFFERENCES IN THE MOSCAPACITOR MOS电容的电势差6.3.1 Work Function Differences 功函数差6.3.2 Oxide Charges 氧化层电荷6.3.3 Flat-Band Voltage 平带电压6.3.4 Threshold Voltage 阈值电压Σ6.3.5 Electric Field Profile 电场分布6.4 CAPACITANCE-VOLTAGE CHARACTERISTICS 电容-电压特性6.4.1 Ideal C-V Characteristics 理想C-V 特性Σ6.4.2 Frequency Effects 频率影响Σ6.4.3 Fixed Oxide and Interface Charge Effects 氧化层固定电荷和界面电荷的影响6.5 THE BASIC MOSFETOPERATION MOSFET基本工作原理6.5.1 MOSFETStructures MOSFET结构6.5.2 Current-Voltage Relationship—Basic Concepts 电流-电压关系——基本概念Σ6.5.3 Current-Voltage Relationship—Mathematical Derivation 电流-电压关系——数学推导6.5.4 Substrate Bias Effects 衬底偏置效应6.6 SMALL-SIGNAL EQUIVALENT CIRCUIT AND FREQUENCY LIMITATION FACTORS 小信号等效电路及频率限制因素6.6.1 Transconductance 跨导6.6.2 Small-Signal Equivalent Circuit 小信号等效电路
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